Matthias Schaller

Matthias Schaller

GlobalFoundries - New York / United States
Others
AD Scientific Index ID: 5050632
person_outline Matthias Schaller's MOST POPULAR ARTICLES
1-) Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device K Frohberg, V Grimm, S Mueller, M Lehr, R Richter, J Klais, M Mazur, ... US Patent 7,550,396, 2009 3372009
2-) Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing HS Yang, R Malik, S Narasimha, Y Li, R Divakaruni, P Agnello, S Allen, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 2332004
3-) Cubic boron nitride films by dc and rf magnetron sputtering: Layer characterization and process diagnostics J Hahn, M Friedrich, R Pintaske, M Schaller, N Kahl, DRT Zahn, F Richter Diamond and related materials 5 (10), 1103-1112, 1996 991996
4-) Integration and optimization of embedded-SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologiesLT Su, J Pellerin, SF Huang, M Khare, D Schepis, K Rim, S Liming, ...IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005952005
5-) High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOLWH Lee, A Waite, H Nii, HM Nayfeh, V McGahay, H Nakayama, D Fried, ...IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005702005