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Qilong Bao
Institute of Microelectronics, Chinese Academy of Sciences - - / China
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AD Scientific Index ID: 4601443
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Qilong Bao's MOST POPULAR ARTICLES
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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate RecessY Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...IEEE Transactions on Electron Devices 63 (2), 614-619, 2016782016
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High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructureS Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...IEEE Electron Device Letters 37 (12), 1617-1620, 2016662016
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Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealingJ Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ...Applied Physics Letters 107 (26), 262109, 2015512015
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Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTsZ Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ...Journal of Vacuum Science & Technology B 34 (4), 2016472016
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Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FETM Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ ChenIEEE Electron Device Letters 39 (3), 413-416, 2018432018
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