Thomas Basler

Thomas Basler

Technische Universität Chemnitz - Chemnitz / Germany
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1765465
Chemnitz University of Technology
person_outline Thomas Basler's MOST POPULAR ARTICLES
1-) Performance and ruggedness of 1200V SiC—Trench—MOSFETD Peters, R Siemieniec, T Aichinger, T Basler, R Esteve, W Bergner, ...2017 29th International Symposium on Power Semiconductor Devices and IC\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'s …, 2017872017
2-) Investigation of threshold voltage stability of SiC MOSFETsD Peters, T Aichinger, T Basler, G Rescher, K Puschkarsky, H Reisinger2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018712018
3-) The new CoolSiC™ trench MOSFET technology for low gate oxide stress and high performanceD Peters, T Basler, B Zippelius, T Aichinger, W Bergner, R Esteve, ...PCIM Europe 2017; International Exhibition and Conference for Power …, 2017772017
4-) Mechanical analysis of press-pack IGBTsT Poller, T Basler, M Hernes, S D’Arco, J LutzMicroelectronics Reliability 52 (9-10), 2397-2402, 2012802012
5-) A SiC trench MOSFET concept offering improved channel mobility and high reliabilityR Siemieniec, D Peters, R Esteve, W Bergner, D Kück, T Aichinger, ...2017 19th European Conference on Power Electronics and Applications (EPE\'17 …, 2017792017