Adam Pyzyna

Adam Pyzyna

IBM Corporation - New York / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4462652
person_outline Adam Pyzyna's MOST POPULAR ARTICLES
1-) Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources IEEE Electron Device Letters 31 (7), 731-733, 2010
2-) FinFET performance advantage at 22nm: An AC perspective 2008 Symposium on VLSI Technology, 12-13, 2008
3-) Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond 2013 IEEE international electron devices meeting, 20.2. 1-20.2. 4, 2013
4-) Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node 2011 Symposium on VLSI Technology-Digest of Technical Papers, 12-13, 2011
5-) Ultra low contact resistivities for CMOS beyond 10-nm node IEEE electron device letters 34 (6), 723-725, 2013