Adrian Faigon

Adrian Faigon

Universidad de Buenos Aires - Buenos Aires / Argentina
Natural Sciences / Physics
AD Scientific Index ID: 854273
University of Buenos Aires
person_outline Adrian Faigon's MOST POPULAR ARTICLES
1-) Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited , , and nanolaminates on different silicon substratesF Campabadal, JM Rafí, M Zabala, O Beldarrain, A Faigón, H Castán, ...Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011532011
2-) Extension of the measurement range of MOS dosimeters using radiation induced charge neutralizationA Faigón, J Lipovetzky, E Redin, G KrusczenskiIEEE Transactions on Nuclear Science 55 (4), 2141-2147, 2008352008
3-) Electrically erasable metal–oxide–semiconductor dosimetersJ Lipovetzky, EG Redin, A FaigonIEEE Transactions on Nuclear Science 54 (4), 1244-1250, 2007342007
4-) Field oxide n-channel MOS dosimeters fabricated in CMOS processesJ Lipovetzky, MA García-Inza, S Carbonetto, MJ Carra, E Redin, ...IEEE Transactions on Nuclear Science 60 (6), 4683-4691, 2013332013
5-) Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetrySH Carbonetto, MAG Inza, J Lipovetzky, EG Redin, LS Salomone, ...IEEE Transactions on Nuclear Science 58 (6), 3348-3353, 2011272011