Agostino Desalvo

Agostino Desalvo

Institute for Microelectronics and Microsystems, CNR - / Italy
Others
AD Scientific Index ID: 5006111
Istituto per la microelettronica e i microsistemi, CNR
person_outline Agostino Desalvo's MOST POPULAR ARTICLES
1-) Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition F Giorgis, F Giuliani, CF Pirri, E Tresso, C Summonte, R Rizzoli, R Galloni, ... Philosophical Magazine B 77 (4), 925-944, 1998 1021998
2-) Optoelectronic properties, structure and composition of -SiC:H films grown in undiluted and diluted silane-methane plasma A Desalvo, F Giorgis, CF Pirri, E Tresso, P Rava, R Galloni, R Rizzoli, ... Journal of applied physics 81 (12), 7973-7980, 1997 711997
3-) Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition C Summonte, R Rizzoli, M Bianconi, A Desalvo, D Iencinella, F Giorgis Journal of applied physics 96 (7), 3987-3997, 2004 572004
4-) A dielectric calculation of energy loss to valence electrons of channelled protons in siliconA Desalvo, R RosaJournal of Physics C: Solid State Physics 10 (10), 1595, 1977561977
5-) Homojunction and heterojunction silicon solar cells deposited by low temperature–high frequency plasma enhanced chemical vapour depositionJ Plá, E Centurioni, C Summonte, R Rizzoli, A Migliori, A Desalvo, ...Thin Solid Films 405 (1-2), 248-255, 2002412002