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Ahmed N Noemaun
Micron Technology Inc - - / United States
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AD Scientific Index ID: 4522565
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Ahmed N Noemaun's MOST POPULAR ARTICLES
1-)
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodesD Zhu, J Xu, AN Noemaun, JK Kim, EF Schubert, MH Crawford, ...Applied Physics Letters 94 (8), 081113, 20092012009
2-)
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodesJ Xu, MF Schubert, AN Noemaun, D Zhu, JK Kim, EF Schubert, MH Kim, ...Applied Physics Letters 94 (1), 011113, 20092002009
3-)
Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillarsJK Kim, AN Noemaun, FW Mont, D Meyaard, EF Schubert, DJ Poxson, ...Applied Physics Letters 93 (22), 2008862008
4-)
Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier dopingD Zhu, AN Noemaun, MF Schubert, J Cho, EF Schubert, MH Crawford, ...Applied Physics Letters 96 (12), 2010502010
5-)
Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodesW Lee, MH Kim, D Zhu, AN Noemaun, JK Kim, EF SchubertJournal of Applied Physics 107 (6), 2010432010
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