Aissa Bellakhdar

Aissa Bellakhdar

Université Amar Telidji de Laghouat - Laghouat / Algeria
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4916805
جامعة عمار ثليجي University of Laghouat
person_outline Aissa Bellakhdar's MOST POPULAR ARTICLES
1-) The thermal effect on the output conductance in AlGaN/GaN HEMT\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'sA Bellakhdar, A Telia, L Semra, A Soltani2012 24th International Conference on Microelectronics (ICM), 1-4, 201262012
2-) An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effectsA Bellakhdar, A Telia, JL CoutazInternational Journal of Electrical and Computer Engineering 10 (2), 1791, 202022020
3-) Influence of the GaN cap layer thickness on the two-dimensional electron gas (2-DEG) sheet charge density of GaN/AlInN/GaN HEMTs with polarization effectA Bellakhdar, A TeliaDigest Journal of Nanomaterials and Biostructures 17 (1), 233-246, 202222022
4-) Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTsA Bellakhdar, A Telia, L Semra, A Soltani2012 International Conference on Engineering and Technology (ICET), 1-5, 201222012
5-) Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMTA Telia, A Bellakhdar, L Semra, A Soltani2013 Saudi International Electronics, Communications and Photonics …, 201312013