Akanksha Rawat

Akanksha Rawat

Indian Institute of Technology Bombay - Mumbai / India
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5150829
भारतीय प्रौद्योगिकी संस्थान, मुंबई
person_outline Akanksha Rawat's MOST POPULAR ARTICLES
1-) Thermally Grown TiO2and Al2O3for GaN-Based MOS-HEMTsA Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ...IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018402018
2-) Realization of high quality silicon nitride deposition at low temperaturesVK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D SahaJournal of Applied Physics 126 (11), 2019262019
3-) Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a DielectricA Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D SahaIEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019222019
4-) Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiNM Meer, A Rawat, K Takhar, S Ganguly, D SahaMicroelectronic Engineering 219, 111144, 2020102020
5-) Tensile strain and fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTsA Rawat, VK Surana, S Ganguly, D SahaSolid-State Electronics 164, 107702, 202022020