Akhil Mauze

Akhil Mauze

University of California Santa Barbara - Santa Barbara / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1848229
person_outline Akhil Mauze's MOST POPULAR ARTICLES
1-) MOCVD grown epitaxial -Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperatureY Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS SpeckAPL Materials 7 (2), 022506, 20191602019
2-) Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS SpeckAPL Materials 7 (12), 121110, 201971*2019
3-) Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVDF Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS SpeckAPL Materials 8 (2), 2020782020
4-) Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructuresP Vogt, A Mauze, F Wu, B Bonef, JS SpeckApplied Physics Express 11 (11), 115503, 2018832018
5-) Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxyA Mauze, Y Zhang, T Itoh, E Ahmadi, JS SpeckApplied Physics Letters 117 (22), 2020822020