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Alessandro Grossi
Infineon Technologies - - / Germany
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AD Scientific Index ID: 4430681
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Alessandro Grossi's MOST POPULAR ARTICLES
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Fundamental variability limits of filament-based RRAMA Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ...2016 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2016932016
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Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAMA Grossi, E Vianello, C Zambelli, P Royer, JP Noel, B Giraud, L Perniola, ...IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018762018
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Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applicationsA Grossi, E Vianello, MM Sabry, M Barlas, L Grenouillet, J Coignus, ...IEEE Transactions on Electron Devices 66 (3), 1281-1288, 2019742019
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Impact of intercell and intracell variability on forming and switching parameters in RRAM arraysA Grossi, D Walczyk, C Zambelli, E Miranda, P Olivo, V Stikanov, A Feriani, ...IEEE Transactions on Electron Devices 62 (8), 2502-2509, 2015702015
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Resistive RAM with multiple bits per cell: Array-level demonstration of 3 bits per cellBQ Le, A Grossi, E Vianello, T Wu, G Lama, E Beigne, HSP Wong, S MitraIEEE Transactions on Electron Devices 66 (1), 641-646, 2018682018
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