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Alessio Spessot
Interuniversity Microelectronics Centre - / Belgium
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AD Scientific Index ID: 4983636
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Alessio Spessot's MOST POPULAR ARTICLES
1-)
Method for tuning the effective work function of a gate structure in a semiconductor device T Kauerauf, A Spessot, C Caillat US Patent 9,076,726, 2015 1982015
2-)
Device exploration of nanosheet transistors for sub-7-nm technology node D Jang, D Yakimets, G Eneman, P Schuddinck, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 64 (6), 2707-2713, 2017 1692017
3-)
Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSIG Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ...IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 20181282018
4-)
Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstrationH Mertens, R Ritzenthaler, V Pena, G Santoro, K Kenis, A Schulze, ...2017 IEEE international electron devices meeting (IEDM), 37.4. 1-37.4. 4, 20171262017
5-)
1T-1C dynamic random access memory status, challenges, and prospectsA Spessot, H OhIEEE Transactions on Electron Devices 67 (4), 1382-1393, 20201122020
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