Alireza Alian

Interuniversity Microelectronics Centre - Leuven / Belgium

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AD Scientific Index ID: 4983639

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Alireza Alian's MOST POPULAR ARTICLES

1-) A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied toand InP CapacitorsG Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE WangIEEE Transactions on Electron Devices 58 (11), 3890-3897, 20111192011

2-) Border traps in Ge/III–V channel devices: Analysis and reliability aspectsE Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013842013

3-) Advancing CMOS beyond the Si roadmap with Ge and III/V devicesM Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011842011

4-) Electrical properties of III-V/oxide interfacesG Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...ECS transactions 19 (5), 375, 2009832009

5-) CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and PerformanceU Peralagu, A Alian, V Putcha, A Khaled, R Rodriguez, ...2019 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2019742019

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