Alireza Kashir

Alireza Kashir

Ferroelectric Memory Company - Tokyo / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4468688
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person_outline Alireza Kashir's MOST POPULAR ARTICLES
1-) Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories Small, 2022
2-) Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering ACS Applied Electronic Materials 3 (2), 629-638, 2021
3-) Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics Advanced Engineering Materials 2000791, 1-8, 2020
4-) Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film Applied Physics Letters 117 (25), 252906, 2020
5-) High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer Nanotechnology 33, 085206, 2021