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Andrea Ghetti
Micron Technology Inc - - / United States
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AD Scientific Index ID: 4522633
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Andrea Ghetti's MOST POPULAR ARTICLES
1-)
Comprehensive analysis of random telegraph noise instability and its scaling in deca–nanometer flash memoriesA Ghetti, CM Compagnoni, AS Spinelli, A ViscontiIEEE Transactions on Electron Devices 56 (8), 1746-1752, 20092322009
2-)
Strained Si, Ge, and Si 1− x Ge x alloys modeled with a first-principles-optimized full-zone k∙ p methodD Rideau, M Feraille, L Ciampolini, M Minondo, C Tavernier, H Jaouen, ...Physical Review B 74 (19), 195208, 20061772006
3-)
The ballistic nano-transistorG Timp, J Bude, KK Bourdelle, J Garno, A Ghetti, H Gossmann, M Green, ...Electron Devices Meeting, 1999. IEDM\'99. Technical Digest. International, 55-58, 1999
4-)
Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?MA Alam, J Bude, A GhettiReliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE …, 2000
5-)
Scaling trends for random telegraph noise in deca-nanometer Flash memoriesA Ghetti, CM Compagnoni, F Biancardi, AL Lacaita, S Beltrami, ...Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008922008
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