Anis Attiaoui

Anis Attiaoui

Stanford University - Stanford / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 5923732
person_outline Anis Attiaoui's MOST POPULAR ARTICLES
1-) Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloysA Attiaoui, O MoutanabbirJournal of Applied Physics 116 (6), 063712, 2014852014
2-) All‐Group IV Transferable Membrane Mid‐Infrared PhotodetectorsMRM Atalla, S Assali, A Attiaoui, C Lemieux‐Leduc, A Kumar, S Abdi, ...Advanced Functional Materials 31 (3), 2006329, 2021712021
3-) High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic responseMRM Atalla, S Assali, S Koelling, A Attiaoui, O MoutanabbirACS Photonics 9 (4), 1425-1433, 2022542022
4-) Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness ScatteringT Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ...Physical Review Applied 13 (4), 044062, 2020402020
5-) Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap SemiconductorsS Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ...Physical Review Applied 15 (2), 024031, 2021222021