Artur Antonyan

Artur Antonyan

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4503077
삼성전자, 한국
person_outline Artur Antonyan's MOST POPULAR ARTICLES
1-) 1Gbit high density embedded STT-MRAM in 28nm FDSOI technologyK Lee, JH Bak, YJ Kim, CK Kim, A Antonyan, DH Chang, SH Hwang, ...2019 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2019702019
2-) Embedded STT-MRAM in 28-nm FDSOI logic process for industrial MCU/IoT applicationYK Lee, Y Song, JC Kim, SC Oh, BJ Bae, SH Lee, JH Lee, UH Pi, B Seo, ...2018 IEEE Symposium on VLSI Technology, 181-182, 2018542018
3-) Embedded MRAM macro for eFlash replacementA Antonyan, S Pyo, H Jung, T Song2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2018202018
4-) Sense amplifier, semiconductor memory device using thereof and read method thereofA AntonyanUS Patent 9,343,138, 2016232016
5-) Resistive memory device providing reference calibration, and operating method thereofA Antonyan, HT JungUS Patent 10,854,289, 2020152020