Asahiko Matsuda|松田朝彦

Asahiko Matsuda|松田朝彦

National Institute for Materials Science - Tsukuba / Japan
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4404028
物質・材料研究機構
person_outline Asahiko Matsuda|松田朝彦's MOST POPULAR ARTICLES
1-) Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETsZ Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ...IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016602016
2-) Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line MonitoringY Nakakubo, A Matsuda, M Fukasawa, Y Takao, T Tatsumi, K Eriguchi, ...Japanese Journal of Applied Physics 49 (8S1), 08JD02, 2010562010
3-) Effects of plasma-induced Si recess structure on n-MOSFET performance degradationK Eriguchi, A Matsuda, Y Nakakubo, M Kamei, H Ohta, K OnoIEEE Electron Device Letters 30 (7), 712-714, 2009562009
4-) Structural and electrical characterization of HBr/O2 plasma damage to Si substrateM Fukasawa, Y Nakakubo, A Matsuda, Y Takao, K Eriguchi, K Ono, ...Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (4 …, 2011552011
5-) Modeling of ion-bombardment damage on Si surfaces for in-line analysisA Matsuda, Y Nakakubo, Y Takao, K Eriguchi, K OnoThin Solid Films 518 (13), 3481-3486, 2010482010