Atsushi Kobayashi

Atsushi Kobayashi

University of Tokyo - Tokyo / Japan
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 395085
東京大学
person_outline Atsushi Kobayashi's MOST POPULAR ARTICLES
1-) Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputteringJW Shon, J Ohta, K Ueno, A Kobayashi, H FujiokaScientific Reports 4 (1), 1-4, 20141372014
2-) Room temperature epitaxial growth of -plane GaN on lattice-matched ZnO substratesA Kobayashi, S Kawano, Y Kawaguchi, J Ohta, H FujiokaApplied physics letters 90 (4), 041908, 20071062007
3-) Room temperature layer by layer growth of GaN on atomically flat ZnOA Kobayashi, H Fujioka, J Ohta, M OshimaJapanese journal of applied physics 43 (1A), L53, 20031002003
4-) Low temperature epitaxial growth of In0. 25Ga0. 75N on lattice-matched ZnO by pulsed laser depositionA Kobayashi, J Ohta, H FujiokaJournal of applied physics 99 (12), 2006932006
5-) High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputteringY Arakawa, K Ueno, A Kobayashi, J Ohta, H FujiokaAPL Materials 4 (8), 2016812016