Benabdelmoumene Abdelmadjid

Benabdelmoumene Abdelmadjid

Centre de Développement des Technologies Avancées - Algiers / Algeria
Others
AD Scientific Index ID: 4481317
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person_outline Benabdelmoumene Abdelmadjid's MOST POPULAR ARTICLES
1-) A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues Microelectronics Reliability 53 (4), 513-519, 2013
2-) Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect Thin Solid Films 517 (1), 369-371, 2008
3-) Recovery investigation of NBTI-induced traps in n-MOSFET devices Microelectronics Reliability 110, 113703, 2020
4-) Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique Microelectronics Reliability 54 (5), 882-888, 2014
5-) A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues Microelectronics Reliability 53 (4), 513-519, 2013