Benjamin Reuters

Rheinisch Westfalische Technische Hochschule Aachen - Aachen / Germany

Others

AD Scientific Index ID: 1763336

RWTH Aachen University

Registration, Add Profile,
Premium Membership

Print Your Certificate

Benjamin Reuters's MOST POPULAR ARTICLES

1-) Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfacesB Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ...Journal of Physics D: Applied Physics 47 (17), 175103, 2014662014

2-) P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriersH Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A VescanIEEE transactions on electron devices 60 (10), 3005-3011, 2013592013

3-) First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistorsH Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan72nd Device Research Conference, 259-260, 2014452014

4-) Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layersB Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ...Journal of electronic materials 42, 826-832, 2013472013

5-) First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFETH Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ...Semiconductor Science and Technology 27 (5), 055004, 2012422012

ARTICLES

Add your articles