Benoit Bakeroot

Benoit Bakeroot

Ghent University - Ghent / Belgium
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1401169
Universiteit Gent
person_outline Benoit Bakeroot's MOST POPULAR ARTICLES
1-) Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistorsTL Wu, D Marcon, S You, N Posthuma, B Bakeroot, S Stoffels, ...IEEE Electron device letters 36 (10), 1001-1003, 20151622015
2-) Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge terminationS Lenci, B De Jaeger, L Carbonell, J Hu, G Mannaert, D Wellekens, S You, ...IEEE Electron Device Letters 34 (8), 1035-1037, 20131592013
3-) Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility TransistorsB Bakeroot, A Stockman, N Posthuma, S Stoffels, S DecoutereIEEE Transactions on Electron Devices 65 (1), 79-86, 2017962017
4-) Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistorsA Stockman, F Masin, M Meneghini, E Zanoni, G Meneghesso, ...IEEE Transactions on Electron Devices 65 (12), 5365-5372, 2018972018
5-) Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructuresTL Wu, B Bakeroot, H Liang, N Posthuma, S You, N Ronchi, S Stoffels, ...IEEE Electron Device Letters 38 (12), 1696-1699, 2017972017