Cecile Saguy

Cecile Saguy

Technion Israel Institute of Technology - Haifa / Israel
Natural Sciences / Physics
AD Scientific Index ID: 301098
הטכניון – מכון טכנולוגי לישראל
person_outline Cecile Saguy's MOST POPULAR ARTICLES
1-) Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers Nature materials 2 (7), 482-486, 2003
2-) 3D graphene‐infused polyimide with enhanced electrothermal performance for long‐term flexible space applications Small 11 (48), 6425-6434, 2015
3-) Superior Surface Transfer Doping of Diamond with MoO3 Advanced Materials Interfaces 1 (3), 1300155, 2014
4-) Tailoring the work function of gold surface by controlling coverage and disorder of polar molecular monolayers The Journal of Physical Chemistry C 112 (33), 12988-12992, 2008
5-) Nitrogen termination of single crystal (100) diamond surface by radio frequency N2 plasma process: An in-situ x-ray photoemission spectroscopy and secondary electron emission … Applied Physics Letters 107 (11), 2015