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Chenyue Ma
Peking University - Beijing / China
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AD Scientific Index ID: 720177
北京大学
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Chenyue Ma's MOST POPULAR ARTICLES
1-)
Zero-mask contact fuse for one-time-programmable memory in standard CMOS processesM Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ...IEEE electron device letters 32 (7), 955-957, 2011982011
2-)
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped bodyF Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M ChanIEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008922008
3-)
Universal NBTI compact model for circuit aging simulation under any stress conditionsC Ma, HJ Mattausch, K Matsuzawa, S Yamaguchi, T Hoshida, M Imade, ...IEEE Transactions on Device and Materials Reliability 14 (3), 818-825, 2014522014
4-)
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFETL Zhang, C Ma, J He, X Lin, M ChanSolid-state electronics 54 (8), 806-808, 2010532010
5-)
Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulationC Ma, HJ Mattausch, M Miyake, T Iizuka, M Miura-Mattausch, ...2013 IEEE International Reliability Physics Symposium (IRPS), 2A. 3.1-2A. 3.6, 2013372013
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