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Chin Che Tin
Auburn University - Auburn / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 858431
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Chin Che Tin's MOST POPULAR ARTICLES
1-)
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxideGY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...IEEE Electron Device Letters 22 (4), 176-178, 20017762001
2-)
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbideGY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...Applied Physics Letters 76 (13), 1713-1715, 20005582000
3-)
Design and fabrication of planar guard ring termination for high-voltage SiC diodesDC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC TinSolid-State Electronics 44 (8), 1367-1372, 20001342000
4-)
Lasing in whispering gallery mode in ZnO nanonailsD Wang, HW Seo, CC Tin, MJ Bozack, JR Williams, M Park, Y TzengJournal of applied physics 99 (9), 20061372006
5-)
Fowler–Nordheim hole tunneling in p-SiC/SiO2 structuresRK Chanana, K McDonald, M Di Ventra, ST Pantelides, LC Feldman, ...Applied Physics Letters 77 (16), 2560-2562, 20001282000
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