Choelhwyi Bae

Choelhwyi Bae

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4437916
삼성전자, 한국
person_outline Choelhwyi Bae's MOST POPULAR ARTICLES
1-) Characteristics of HfO2 thin films grown by plasma atomic layer depositionJ Kim, S Kim, H Jeon, MH Cho, KB Chung, C BaeApplied Physics Letters 87 (5), 2005962005
2-) Methods for identifying an allowable process margin for integrated circuitsC Bae, YS JinUS Patent 7,642,106, 2010812010
3-) Composition, structure, and electrical characteristics of gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methodsJ Kim, S Kim, H Kang, J Choi, H Jeon, M Cho, K Chung, S Back, K Yoo, ...Journal of applied physics 98 (9), 094504, 2005562005
4-) Surface passivation of n-GaN by nitrided-thin-Ga2O3∕ SiO2 and Si3N4 filmsC Bae, C Krug, G Lucovsky, A Chakraborty, U MishraJournal of applied physics 96 (5), 2674-2680, 2004542004
5-) Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition processC Bae, G LucovskyJournal of Vacuum Science & Technology A 22 (6), 2402-2410, 2004382004