ChoongHyun Lee

ChoongHyun Lee

Zhejiang University - Hangzhou / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 678626
浙江大学
person_outline ChoongHyun Lee's MOST POPULAR ARTICLES
1-) Desorption kinetics of GeO from GeO2/Ge structure Journal of applied physics 108 (5), 2010
2-) A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
3-) Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics ECS Transactions 19 (1), 165, 2009
4-) Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key Microelectronic Engineering 86 (7-9), 1571-1576, 2009
5-) Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a keyA Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K NagashioMicroelectronic Engineering 86 (7-9), 1571-1576, 20091862009