Daniel Habersat

Daniel Habersat

US Army - Washington / United States
Natural Sciences / Physics
AD Scientific Index ID: 4400713
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person_outline Daniel Habersat's MOST POPULAR ARTICLES
1-) Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETsAJ Lelis, R Green, DB Habersat, M ElIEEE Transactions on Electron Devices 62 (2), 316-323, 20143302014
2-) Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurementsAJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ...IEEE Transactions on Electron Devices 55 (8), 1835-1840, 20083252008
3-) A physical model of high temperature 4H-SiC MOSFETsS Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D HabersatIEEE Transactions on Electron devices 55 (8), 2029-2040, 20081912008
4-) Characterization of transient gate oxide trapping in SiC MOSFETs using fast I–V techniquesM Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...IEEE Transactions on Electron Devices 55 (8), 2004-2012, 20081552008
5-) Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobilityTL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ...Applied Physics Letters 95 (3), 20091182009