Daniel Habersat

Daniel Habersat

US Army - Washington / United States
Natural Sciences / Physics
AD Scientific Index ID: 4400713
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person_outline Daniel Habersat's MOST POPULAR ARTICLES
1-) A physical model of high temperature 4H-SiC MOSFETs IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008
2-) Characterization of transient gate oxide trapping in SiC MOSFETs using fast I–V techniques IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008
3-) Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility Applied Physics Letters 95 (3), 2009
4-) Characterization of transient gate oxide trapping in SiC MOSFETs using fast I–V techniquesM Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...IEEE Transactions on Electron Devices 55 (8), 2004-2012, 20081552008
5-) Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobilityTL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ...Applied Physics Letters 95 (3), 20091192009