NEWS
New Feature!!!! University Subject Rankings in 12 branches
FOR SCIENTIST REGISTRATION FOR INSTITUTIONAL BULK REGISTRATION
FOR EDIT YOUR UNIVERSITY / INSTITUTION PAGE
Some differences of the AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
List without CERN, Statistical Data etc. Only in AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
AD
Scientific Index 2024
About Us
Methodology
Compare & Choose
Contact - FAQ
login
Login
person_add
Register
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
school
University Rankings
subject
University Subject Rankings
insights
Subject Rankings
place
Country Rankings
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
local_fire_department
Country Top Lists
David L Kencke
Intel Corporation - Kaliforniya / United States
Others
AD Scientific Index ID: 4376848
-
Edit Form
Registration, Add Profile,
Premium Membership
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Congresses (0)
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
David L Kencke's MOST POPULAR ARTICLES
1-)
Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory arrayD Xu, TA Lowrey, DL KenckeUS Patent 6,462,984, 20021922002
2-)
MRAM as embedded non-volatile memory solution for 22FFL FinFET technologyO Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 20181482018
3-)
The impact of thermal boundary resistance in phase-change memory devicesJP Reifenberg, DL Kencke, KE GoodsonIEEE Electron Device Letters 29 (10), 1112-1114, 20081432008
4-)
Floating body cell with independently-controlled double gates for high density memoryI Ban, UE Avci, U Shah, CE Barns, DL Kencke, P Chang2006 International Electron Devices Meeting, 1-4, 20061352006
5-)
Floating body memory cell having gates favoring different conductivity type regionsPLD Chang, UE Avci, DL Kencke, I BanUS Patent 8,217,435, 20121242012
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept