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David Niegemann
Institut Néel - / France
Natural Sciences / Physics
AD Scientific Index ID: 5085328
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David Niegemann's MOST POPULAR ARTICLES
1-)
Gate-based high fidelity spin readout in a CMOS deviceM Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...Nature nanotechnology 14 (8), 737-741, 20191372019
2-)
Charge detection in an array of CMOS quantum dotsE Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...Physical Review Applied 14 (2), 024066, 2020632020
3-)
Spin quintet in a silicon double quantum dot: Spin blockade and relaxationT Lundberg, J Li, L Hutin, B Bertrand, DJ Ibberson, CM Lee, ...Physical Review X 10 (4), 041010, 2020282020
4-)
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arraysL Hutin, B Bertrand, E Chanrion, H Bohuslavskyi, F Ansaloni, TY Yang, ...2019 IEEE International Electron Devices Meeting (IEDM), 37.7. 1-37.7. 4, 2019282019
5-)
Parity and singlet-triplet high-fidelity readout in a silicon double quantum dot at 0.5 KDJ Niegemann, V El-Homsy, B Jadot, M Nurizzo, B Cardoso-Paz, ...PRX Quantum 3 (4), 040335, 2022212022
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