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David Seo
KLA - / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4969882
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David Seo's MOST POPULAR ARTICLES
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ... Nature materials 10 (8), 625-630, 2011 21262011
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Reproducible resistance switching in polycrystalline NiO films S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ... Applied Physics Letters 85 (23), 5655-5657, 2004 11742004
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Graphene barristor, a triode device with a gate-controlled Schottky barrier H Yang, J Heo, S Park, HJ Song, DH Seo, KE Byun, P Kim, IK Yoo, ... Science 336 (6085), 1140-1143, 2012 10492012
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Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulsesIG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ...IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 20047862004
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Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memoryMJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ...Nano letters 9 (4), 1476-1481, 20095032009
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