Davide Favero

Davide Favero

Università degli Studi di Padova - Padova / Italy
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5278002
University of Padua
person_outline Davide Favero's MOST POPULAR ARTICLES
1-) Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectivesM Buffolo, D Favero, A Marcuzzi, C De Santi, G Meneghesso, E Zanoni, ...IEEE Transactions on Electron Devices, 2024122024
2-) Review on the degradation of GaN-based lateral power transistorsC De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ...e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 202172021
3-) High-temperature PBTI in trench-gate vertical GaN power MOSFETs: Role of border and semiconductor trapsD Favero, A Cavaliere, C De Santi, M Borga, W Gonçalez Filho, K Geens, ...2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 202342023
4-) Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCADN Zagni, M Fregolent, A Del Fiol, D Favero, F Bergamin, G Verzellesi, ...Journal of Semiconductors 45 (3), 032501, 202442024
5-) Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETsD Favero, C De Santi, K Mukherjee, K Geens, M Borga, B Bakeroot, S You, ...2022 IEEE International Reliability Physics Symposium (IRPS), P20-1-P20-4, 202242022