Edward Van Brunt

Edward Van Brunt

Wolfspeed - / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4970069
person_outline Edward Van Brunt's MOST POPULAR ARTICLES
1-) Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV - JW Palmour, L Cheng, V Pala, EV Brunt, DJ Lichtenwalner, GY Wang, ...
2-) 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems - V Pala, EV Brunt, L Cheng, M O\\\'Loughlin, J Richmond, A Burk, ST Allen, ...
3-) Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions - K Vechalapu, S Bhattacharya, E Van Brunt, SH Ryu, D Grider, ...
4-) A new edge termination technique for high-voltage devices in 4H-SiC–multiple-floating-zone junction termination extensionW Sung, E Van Brunt, BJ Baliga, AQ HuangIEEE Electron Device Letters 32 (7), 880-882, 20111392011
5-) New generation 10kV SiC power MOSFET and diodes for industrial applicationsJB Casady, V Pala, DJ Lichtenwalner, E Van Brunt, B Hull, GY Wang, ...Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 20151332015