Elvedin Memisevic

Elvedin Memisevic

Microsoft Research - / United States
Others
AD Scientific Index ID: 4395013
person_outline Elvedin Memisevic's MOST POPULAR ARTICLES
1-) InAs-Al hybrid devices passing the topological gap protocolM Aghaee, A Akkala, Z Alam, R Ali, A Alcaraz Ramirez, M Andrzejczuk, ...Physical Review B 107 (24), 245423, 20231382023
2-) Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 VE Memisevic, J Svensson, M Hellenbrand, E Lind, LE WernerssonElectron Devices Meeting (IEDM), 2016 IEEE International, 19.1. 1-19.1. 4, 20161362016
3-) Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decadeE Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...Nano letters 17 (7), 4373-4380, 20171022017
4-) High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substratesS Johansson, E Memisevic, LE Wernersson, E LindIEEE Electron Device Letters 35 (5), 518-520, 2014992014
5-) Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effectsA Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ...Nano letters 20 (5), 3255-3262, 2020752020