Enrique Barajas Ojeda

Enrique Barajas Ojeda

Universitat Politècnica de Catalunya BarcelonaTech - Barcelona / Spain
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5037977
Polytechnic University of Catalonia
person_outline Enrique Barajas Ojeda's MOST POPULAR ARTICLES
1-) Low noise amplifiers for low-power impulse radio ultra-wideband receivers JL Jimenez, D Pena, E Ojeda, I Cairo, M Ikeda US Patent 20070216481A1, 2007 262007
2-) MOSFET degradation dependence on input signal power in a RF power amplifier A Crespo-Yepes, E Barajas, J Martin-Martinez, D Mateo, X Aragones, ... Microelectronic Engineering 178, 289-292, 2017 192017
3-) A transistor array chip for the statistical characterization of process variability, RTN and BTI/CHC aging J Diaz-Fortuny, J Martin-Martinez, R Rodriguez, M Nafria, R Castro-Lopez, ... Synthesis, Modeling, Analysis and Simulation Methods and Applications to …, 2017 142017
4-) MOSFET dynamic thermal sensor for IC testing applicationsF Reverter, X Perpiñà, E Barajas, J León, M Vellvehi, X Jordà, J AltetSensors and Actuators A: Physical 242, 195-202, 2016132016
5-) A 75 pJ/bit all-digital quadrature coherent IR-UWB transceiver in 0.18 µm CMOSE Barajas, D Gómez, D Mateo, JL GonzálezRadio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE, 197-200, 2010132010