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Evan Lobisser
Keysight Technologies - Santa Rosa / United States
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AD Scientific Index ID: 4964342
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Evan Lobisser's MOST POPULAR ARTICLES
1-)
130nm InP DHBTs with ft >0.52THz and fmax >1.1THzM Urteaga, R Pierson, P Rowell, V Jain, E Lobisser, MJW Rodwell69th Device Research Conference, 281-282, 2011
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InP HBTs for THz frequency integrated circuits M Urteaga, M Seo, J Hacker, Z Griffith, A Young, R Pierson, P Rowell, ... IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011 462011
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Ex situ Ohmic contacts to n-InGaAsA Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ...Journal of Vacuum Science & Technology B 28 (4), C5I7-C5I9, 2010392010
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1.0 THz fmaxInP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistanceV Jain, JC Rode, HW Chiang, A Baraskar, E Lobisser, BJ Thibeault, ...69th Device Research Conference, 271-272, 2011362011
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200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax≫ 800 GHz and ƒτ= 360 GHzE Lobisser, Z Griffith, V Jain, BJ Thibeault, MJW Rodwell, D Loubychev, ...2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009352009
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