Feng Gan （冯 淦）

Feng Gan （冯 淦）

EpiWorld International Co., LTD - New Taipei City / China
Others
AD Scientific Index ID: 4967994
person_outline Feng Gan （冯 淦）'s MOST POPULAR ARTICLES
1-) Molecular-beam epitaxy and characteristics of Ga N y As 1-x-y Bi x W Huang, K Oe, G Feng, M Yoshimoto Journal of applied physics 98 (5), 053505-053505-6, 2005 1402005
2-) The influence of temperature on mode I fracture toughness and fracture characteristics of sandstoneG Feng, Y Kang, T Meng, Y Hu, X LiRock Mechanics and Rock Engineering 50, 2007-2019, 20171302017
3-) Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mappingG Feng, J Suda, T KimotoApplied Physics Letters 92 (22), 20081292008
4-) Space-modulated junction termination extension for ultrahigh-voltage pin diodes in 4H-SiCG Feng, J Suda, T KimotoIEEE transactions on electron devices 59 (2), 414-418, 20111232011
5-) Triple Shockley type stacking faults in 4H-SiC epilayersG Feng, J Suda, T KimotoApplied Physics Letters 94 (9), 091910-091910-3, 2009862009