Feng Zhang

Feng Zhang

Purdue University - West Lafayette / United States
Engineering & Technology / Nanoscience and Nanotechnology
AD Scientific Index ID: 1586437
person_outline Feng Zhang's MOST POPULAR ARTICLES
1-) Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memoriesF Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ...Nature Materials 18 (1), 55-61, 20192382019
2-) Nanoroughened surfaces for efficient capture of circulating tumor cells without using capture antibodiesW Chen, S Weng, F Zhang, S Allen, X Li, L Bao, RHW Lam, JA Macoska, ...ACS nano 7 (1), 566-575, 20132362013
3-) Tunability of Short-Channel Effects in MoS2 Field-Effect DevicesF Zhang, A JoergNano letters 15 (1), 301-306, 2015802015
4-) Characterization of Single Defects in Ultrascaled MoS2 Field-Effect TransistorsB Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...ACS nano 12 (6), 5368-5375, 2018792018
5-) Memory applications from 2D materialsCC Chiang, V Ostwal, P Wu, CS Pang, F Zhang, Z Chen, J AppenzellerApplied Physics Reviews 8 (2), 2021692021