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Fiorenza Esposito
Institute of Materials for Electronics and Magnetism, CNR - / Italy
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AD Scientific Index ID: 5667094
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Fiorenza Esposito's MOST POPULAR ARTICLES
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Built-in tensile strain dependence on the lateral size of monolayer MoS 2 synthesized by liquid precursor chemical vapor depositionL Seravalli, F Esposito, M Bosi, L Aversa, G Trevisi, R Verucchi, ...Nanoscale 15 (35), 14669-14678, 202342023
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Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor depositionF Esposito, M Bosi, G Attolini, F Rossi, SE Panasci, P Fiorenza, ...Applied Surface Science 639, 158230, 202332023
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Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor depositionL Seravalli, F Esposito, M Bosi, L Aversa, G Trevisi, R Verrucchi, ...arXiv preprint arXiv:2303.15881, 202312023
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Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor depositionL Seravalli, F Esposito, M Bosi, L Aversa, G Trevisi, R Verucchi, ...2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 581-582, 20232023
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Influence of the Carrier Gas Flow in Cvd Synthesis of 2-Dimensional Mos2 Based on the Spin-Coating of Liquid Molybdenum PrecursorsF Esposito, M Bosi, G Attolini, F Rossi, R Fornari, F Fabbri, L SeravalliAvailable at SSRN 4827809, 0
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