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Flurin D Eisner
Imperial College London - London / United Kingdom
Engineering & Technology / Energy Engineering
AD Scientific Index ID: 1260534
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Flurin D Eisner's MOST POPULAR ARTICLES
1-)
An Alkylated Indacenodithieno[3,2‐b]thiophene‐Based Nonfullerene Acceptor with High Crystallinity Exhibiting Single Junction Solar Cell Efficiencies Greater than …Z Fei, FD Eisner, X Jiao, M Azzouzi, JA Röhr, Y Han, M Shahid, ...Advanced Materials 30 (8), 1705209, 20184912018
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Hybridization of local exciton and charge-transfer states reduces nonradiative voltage losses in organic solar cellsFD Eisner, M Azzouzi, Z Fei, X Hou, TD Anthopoulos, TJS Dennis, ...Journal of the American Chemical Society 141 (15), 6362-6374, 20192492019
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Copper (I) thiocyanate (CuSCN) hole‐transport layers processed from aqueous precursor solutions and their application in thin‐film transistors and highly efficient organic and …N Wijeyasinghe, A Regoutz, F Eisner, T Du, L Tsetseris, YH Lin, H Faber, ...Advanced Functional Materials 27 (35), 1701818, 20171982017
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Density of Deep Trap States in Oriented TiO2 Nanotube ArraysQ Zhang, V Celorrio, K Bradley, F Eisner, D Cherns, W Yan, DJ FermínThe Journal of Physical Chemistry C 118 (31), 18207-18213, 2014842014
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p‐Doping of Copper (I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar CellsN Wijeyasinghe, F Eisner, L Tsetseris, YH Lin, A Seitkhan, J Li, F Yan, ...Advanced Functional Materials 28 (31), 1802055, 2018782018
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