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Frederic Allibert
Soitec - / France
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AD Scientific Index ID: 4970114
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Frederic Allibert's MOST POPULAR ARTICLES
1-)
Germanium-on-insulator (GeOI) substrates—a novel engineered substrate for future high performance devices T Akatsu, C Deguet, L Sanchez, F Allibert, D Rouchon, T Signamarcheix, ... Materials science in semiconductor processing 9 (4-5), 444-448, 2006 1682006
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High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyondQ Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...Electron Devices Meeting (IEDM), 2013 IEEE International, 9.2.1-9.2.4, 20131202013
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High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFETK Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 20121202012
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Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germaniumC Deguet, L Sanchez, T Akatsu, F Allibert, J Dechamp, F Madeira, ...Electronics Letters 42 (7), 415-417, 20061012006
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Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applicationsF Allibert, J WidiezUS Patent 9,129,800, 2015872015
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