Freedsmanjj

Freedsmanjj

Nagoya Institute of Technology - Nagoya / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 530456
名古屋工業大学
person_outline Freedsmanjj's MOST POPULAR ARTICLES
1-) The 2018 GaN power electronics roadmapH Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...Journal of Physics D: Applied Physics 51 (16), 163001, 20187792018
2-) Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V)JJ Freedsman, T Egawa, Y Yamaoka, Y Yano, A Ubukata, T Tabuchi, ...Applied Physics Express 7 (4), 041003, 2014872014
3-) High Drain Current Density E-Mode/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-MeritJJ Freedsman, T Kubo, T EgawaIEEE transactions on electron devices 60 (10), 3079-3083, 2013712013
4-) Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance …JJ Freedsman, T Kubo, T EgawaApplied Physics Letters 99 (3), 2011622011
5-) Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐SiJJ Freedsman, A Watanabe, Y Yamaoka, T Kubo, T Egawaphysica status solidi (a) 213 (2), 424-428, 2016552016