Freedsmanjj

Freedsmanjj

Nagoya Institute of Technology - Nagoya / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 530456
名古屋工業大学
person_outline Freedsmanjj's MOST POPULAR ARTICLES
1-) The 2018 GaN power electronics roadmap Journal of Physics D: Applied Physics 51 (16), 163001, 2018
2-) Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V) Applied Physics Express 7 (4), 041003, 2014
3-) High Drain Current Density E-Mode/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit IEEE transactions on electron devices 60 (10), 3079-3083, 2013
4-) Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance … Applied Physics Letters 99 (3), 2011
5-) Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si physica status solidi (a) 213 (2), 424-428, 2016