NEWS
New Feature!!!! University Subject Rankings in 12 branches
FOR SCIENTIST REGISTRATION FOR INSTITUTIONAL BULK REGISTRATION
FOR EDIT YOUR UNIVERSITY / INSTITUTION PAGE
Some differences of the AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
List without CERN, Statistical Data etc. Only in AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
AD
Scientific Index 2024
About Us
Methodology
Compare & Choose
Contact - FAQ
login
Login
person_add
Register
school
University Rankings
subject
University Subject Rankings
place
Country Rankings
insights
i10 Productivity Rankings
insights
Subject Rankings
format_list_numbered
Top 100 Scientists
format_list_numbered
Citation Rankings
format_quote
Top 100 Institutions
local_fire_department
Country Top Lists
Geert Hellings
AD Scientific Index 2024
Engineering & Technology / Electrical & Electronic Engineering
Interuniversity Microelectronics Centre - / Belgium
Edit Form
Registration, Add Profile,
Premium Membership
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Congresses (0)
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Geert Hellings's MOST POPULAR ARTICLES
1-)
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ... Journal of The Electrochemical Society 155 (7), H552, 2008 3222008
2-)
Comphy—A compact-physics framework for unified modeling of BTIG Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...Microelectronics Reliability 85, 49-65, 20181542018
3-)
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalabilityJ Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...2008 IEEE International Electron Devices Meeting, 1-4, 20081512008
4-)
Electrical TCAD simulations of a germanium pMOSFET technologyG Hellings, G Eneman, R Krom, B De Jaeger, J Mitard, A De Keersgieter, ...IEEE Transactions on Electron Devices 57 (10), 2539-2546, 20101192010
5-)
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n JunctionsG Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...IEEE Transactions on Electron Devices 55 (9), 2287-2296, 20081042008
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept