geoffrey pourtois

geoffrey pourtois

Interuniversity Microelectronics Centre - Leuven / Belgium
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4983544
person_outline geoffrey pourtois's MOST POPULAR ARTICLES
1-) 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 8022011
2-) Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 E Scalise, M Houssa, G Pourtois, V Afanas’ ev, A Stesmans Nano Research 5, 43-48, 2012 6742012
3-) Electronic properties of hydrogenated silicene and germanene M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’ Ev, A Stesmans Applied Physics Letters 98 (22), 223107, 2011 4442011
4-) Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymersD Beljonne, G Pourtois, C Silva, E Hennebicq, LM Herz, RH Friend, ...Proceedings of the National Academy of Sciences 99 (17), 10982-10987, 20024412002
5-) Spin− orbit coupling and intersystem crossing in conjugated polymers: a configuration interaction descriptionD Beljonne, Z Shuai, G Pourtois, JL BredasThe Journal of Physical Chemistry A 105 (15), 3899-3907, 20014072001