Georgios Vellianitis

Georgios Vellianitis

Taiwan Semiconductor Manufacturing Company Ltd. - Hsinchu / Taiwan
Others
AD Scientific Index ID: 4395932
台湾半导体制造公司有限公司
person_outline Georgios Vellianitis's MOST POPULAR ARTICLES
1-) Barrier layer for FinFET channelsRK Oxland, M Van Dal, MC Holland, G Vellianitis, M PasslackUS Patent 9,214,555, 20153692015
2-) Strained channel field effect transistorM Van Dal, G Doornbos, G Vellianitis, TL Lee, F YuanUS Patent 9,761,666, 20171952017
3-) HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam depositionA Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...Applied Physics Letters 86 (3), 20051832005
4-) Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parametersA Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ...Journal of Applied Physics 92 (1), 426-431, 20021362002
5-) Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithographyMJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ...2007 IEEE symposium on VLSI technology, 110-111, 20071062007