Gonzalo Alonso Velázquez Nevárez

Gonzalo Alonso Velázquez Nevárez

Centro de Investigacion en Materiales Avanzados - Chihuahua / Mexico
Others
AD Scientific Index ID: 4759063
Advanced Materials Research Center
person_outline Gonzalo Alonso Velázquez Nevárez's MOST POPULAR ARTICLES
1-) Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film TransistorsGSR Mullapudi, GA Velazquez-Nevarez, C Avila-Avendano, ...ACS Applied Electronic Materials 1 (6), 1003-1011, 2019282019
2-) Optical and electrical properties of (002)-oriented ZnO films prepared on amorphous substrates by sol-gel spin-coatingGA Velázquez-Nevárez, JR Vargas-García, J Aguilar-Hernández, ...Materials Research 19, 113-117, 2016282016
3-) Preparation, characterization and electronic properties of fluorine-doped tin oxide filmsGA Velazquez-Nevarez, JR Vargas-García, L Lartundo-Rojas, F Chen, ...Journal of Wuhan University of Technology-Mater. Sci. Ed. 31 (1), 48-51, 201662016
4-) Low-temperature deposition of inorganic–organic HfO2–PMMA hybrid gate dielectric layers for high-mobility ZnO thin-film transistors, ACS Appl. Electron. Mater. 1 (2019) 1003–1011GSR Mullapudi, GA Velazquez-Nevarez, C Avila-Avendano, ...5
5-) Dopaje aniónico (F-, N3-) de películas delgadas de ZnO: efecto sobre sus propiedades ópticas y electrónicasGA Velázquez Nevárez