Graham E Rowlands

Graham E Rowlands

Raytheon Company - - / United States
Others
AD Scientific Index ID: 4445691
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person_outline Graham E Rowlands's MOST POPULAR ARTICLES
1-) Voltage-induced ferromagnetic resonance in magnetic tunnel junctionsJ Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...Physical review letters 108 (19), 197203, 20122952012
2-) Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memoryH Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...Journal of Applied Physics 109 (7), 20112362011
3-) Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctionsP Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...Applied Physics Letters 98 (11), 20112192011
4-) Nanosecond-timescale low energy switching of in-plane magnetic tunnel junctions through dynamic Oersted-field-assisted spin Hall effectSV Aradhya, GE Rowlands, J Oh, DC Ralph, RA BuhrmanNano letters 16 (10), 5987-5992, 20161652016
5-) Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizersGE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...Applied Physics Letters 98 (10), 20111142011