Hai Jiang

Hai Jiang

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4502063
삼성전자, 한국
person_outline Hai Jiang's MOST POPULAR ARTICLES
1-) A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical reviewMA Alam, BK Mahajan, YP Chen, W Ahn, H Jiang, SH ShinIEEE Transactions on Electron Devices 66 (11), 4556-4565, 2019512019
2-) The Impact of Self-Heating on HCI Reliability in High-Performance Digital CircuitsH Jiang, SH Shin, X Liu, X Zhang, MA AlamIEEE Electron Device Letters 38 (4), 430-433, 2017512017
3-) Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETsH Jiang, N Xu, B Chen, L Zeng, Y He, G Du, X Liu, X ZhangSemiconductor Science and Technology 29 (11), 115021, 2014482014
4-) Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuitsW Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA AlamMicroelectronics Reliability 81, 262-273, 2018442018
5-) Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETsH Jiang, SH Shin, X Liu, X Zhang, MA Alam2016 IEEE International Reliability Physics Symposium (IRPS), 2A-3-1-2A-3-7, 2016422016