Hai Lin

Stanford University - Stanford / United States

Engineering & Technology / Electrical & Electronic Engineering

AD Scientific Index ID: 1654921

Registration, Add Profile,
Premium Membership

Print Your Certificate

Hai Lin's MOST POPULAR ARTICLES

1-) Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxyR Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS HarrisApplied physics letters 99 (18), 181125, 20113082011

2-) Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxyY Huo, H Lin, R Chen, M Makarova, Y Rong, M Li, TI Kamins, J Vuckovic, ...Applied Physics Letters 98 (1), 011111, 20111732011

3-) Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopyH Lin, R Chen, W Lu, Y Huo, TI Kamins, JS HarrisApplied Physics Letters 100 (10), 102109-102109-4, 20121432012

4-) GeSn technology: Extending the Ge electronics roadmapS Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 20111452011

5-) Raman study of strained Ge1− xSnx alloysH Lin, R Chen, Y Huo, TI Kamins, JS HarrisApplied Physics Letters 98 (26), 20111292011

ARTICLES

Add your articles