Han Wui Then

Han Wui Then

Intel Corporation - California / United States
Others
AD Scientific Index ID: 4376726
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person_outline Han Wui Then's MOST POPULAR ARTICLES
1-) Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swingG Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ...2011 International electron devices meeting, 33.6. 1-33.6. 4, 20113822011
2-) 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 20191982019
3-) Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...2011 international electron devices meeting, 33.1. 1-33.1. 4, 20111952011
4-) High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architectureR Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ...2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 20101712010
5-) Charge control analysis of transistor laser operationM Feng, N Holonyak, HW Then, G WalterApplied physics letters 91 (5), 20071242007