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Han Wui Then
Intel Corporation - Kaliforniya / United States
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AD Scientific Index ID: 4376726
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Han Wui Then's MOST POPULAR ARTICLES
1-)
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swingG Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ...2011 International electron devices meeting, 33.6. 1-33.6. 4, 20113822011
2-)
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...2011 international electron devices meeting, 33.1. 1-33.1. 4, 20111952011
3-)
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 20191712019
4-)
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architectureR Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ...2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 20101712010
5-)
Charge control analysis of transistor laser operationM Feng, N Holonyak, HW Then, G WalterApplied physics letters 91 (5), 20071242007
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